| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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210,000 pcs
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210000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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28,000 pcs
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28000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
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3,440 pcs
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3440 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR430ATRPBF is an N-Channel enhancement-mode power MOSFET from Vishay Siliconix designed for high-voltage switching applications.
This MOSFET features a drain-source voltage (Vdss) of 500V and a continuous drain current of 5.0A at 25°C, with a maximum on-resistance of 1.7 Ohm at Vgs = 10V. It offers low gate charge (24 nC maximum) for simpler drive requirements and improved gate, avalanche, and dynamic dV/dt ruggedness. Key characteristics include a maximum power dissipation of 110W and an operating junction temperature range of -55°C to 150°C.
The device is housed in a surface-mount DPAK (TO-252) package, suitable for automated assembly. It is intended for use in switch mode power supplies (SMPS), uninterruptible power supplies, and high-speed power switching circuits.
The maximum drain-source voltage (Vdss) is 500 V.
The maximum continuous drain current is 5.0 A at case temperature Tc=25°C.
It comes in a DPAK (TO-252) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
RoHS status is listed as RoHS3 Compliant, but this has low confidence as it is not verified from a datasheet statement.
The maximum total gate charge (Qg) at Vgs=10V is 24 nC.
Cross-references include SiHFR430A-GE3, SiHFR430ATR-GE3, IRFR430APbF, and others from Vishay Siliconix, as well as distributor part numbers from DigiKey.