| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,020 pcs
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10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The IRFR430APBF is an N-Channel power MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 500V and a continuous drain current of 5A at 25°C case temperature. The device offers a maximum on-resistance of 1.7 Ohms at 10V gate drive, ensuring efficient power conversion.
Key electrical characteristics include a maximum gate charge of 24 nC, input capacitance of 490 pF, and a gate threshold voltage of 4.5V. The MOSFET is rated for single pulse avalanche energy of 130 mJ and repetitive avalanche current of 5.0A, providing robust performance in demanding environments.
The device is housed in a surface-mount DPAK (TO-252) package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 110W at 25°C case temperature. Typical applications include switch mode power supplies (SMPS), uninterruptible power supplies, and high-speed power switching circuits.
The drain-source voltage (Vds) is 500V.
5A at Tc=25°C, derated to 3.2A at Tc=100°C.
Maximum 1.7 Ohms at Id=3A, Vgs=10V.
Surface mount DPAK (TO-252-3, DPak).
-55°C to 150°C (junction temperature).
The datasheet indicates lead-free (PbF) construction and material categorization for RoHS compliance.
Maximum gate charge (Qg) is 24 nC at Vgs=10V.