| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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63,020 pcs
|
63020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,216 pcs
|
1216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,216 pcs
|
1216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR420TRPBF, manufactured by Vishay Dale (Vishay Siliconix), is a third-generation N-Channel power MOSFET designed for fast switching and rugged operation. With a drain-source breakdown voltage of 500 V and continuous drain current of 2.4 A at Tc=25°C, it is suitable for high-voltage applications.
The MOSFET features a low maximum on-resistance of 3 Ohm at Vgs=10V and Id=1.4A, and a total gate charge of 19 nC, enabling efficient switching. Input capacitance is 360 pF at Vds=25V. It also offers repetitive avalanche capability with single pulse avalanche energy of 400 mJ.
The device is housed in a DPAK (TO-252) surface-mount package, available in tape and reel packaging for automated assembly. It is lead-free and RoHS compliant, with a moisture sensitivity level of 1 (unlimited). Operating junction temperature ranges from -55°C to 150°C.
Ideal for high-voltage switching circuits and power conversion, this MOSFET is designed for ease of paralleling and robust performance.
500 V minimum.
It is available in a DPAK (TO-252) surface-mount package.
-55°C to 150°C junction temperature.
Yes, it is RoHS3 compliant and lead-free.
2.4 A at Tc=25°C.
Maximum 3 Ohm at Vgs=10V, Id=1.4A.
Maximum 4 V at Id=250 µA.