| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR420PBF is a 500V, 2.4A N-Channel power MOSFET from Vishay Dale, designed for high-voltage switching applications. It features a maximum drain-source on-resistance of 3Ω at Vgs=10V and Id=1.4A, ensuring efficient power handling. The device is rated for a continuous drain current of 2.4A at 25°C case temperature and 1.5A at 100°C, with a pulsed drain current capability of 8.0A.
This MOSFET offers a total gate charge of 19nC at Vgs=10V, with gate-source charge of 3.3nC and gate-drain charge of 13nC, enabling fast switching. Input capacitance is 360pF at Vds=25V. The device is avalanche-rated, with single-pulse avalanche energy of 400mJ and repetitive avalanche energy of 4.2mJ. It also features a dynamic dV/dt rating of 3.5V/ns for robust performance in demanding environments.
The IRFR420PBF is housed in a TO-252-3 (DPak) surface-mount package, suitable for automated assembly. It supports a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 42W at 25°C case temperature. The part is lead-free and RoHS3 compliant.
The maximum drain-source voltage (Vdss) is 500V.
The continuous drain current is 2.4A at TC=25°C and 1.5A at TC=100°C.
The maximum on-resistance is 3Ω at Id=1.4A and Vgs=10V.
The IRFR420PBF is available in a TO-252-3 (DPak) surface-mount package.
The junction operating temperature range is -55°C to 150°C.
Yes, the IRFR420PBF is RoHS3 compliant and lead-free.
The total gate charge is 19nC at Vgs=10V, with gate-source charge of 3.3nC and gate-drain charge of 13nC.