| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
|
8000 pcs | On Request | 1 | On Request | On Request | 1847+ | On Request | On Request | |
|
1,051 pcs
|
1051 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRFR4105ZTRPBF is a high-performance N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 55V and can handle a continuous drain current (Id) of up to 30A at the case temperature.
With a power dissipation (Pd) rating of 48W at the case temperature, this MOSFET is suitable for applications requiring robust power handling capabilities. The component is designed for surface mounting and comes in a TO-252AA (DPAK) package, facilitating integration into compact electronic designs.
This MOSFET is part of Infineon's extensive range of discrete semiconductor products. Its specifications make it a reliable choice for switching and amplification tasks in power management circuits, motor control, and other general-purpose electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the IRFR4105ZTRPBF is 55V.
The continuous drain current (Id) for the IRFR4105ZTRPBF is 30A.
The power dissipation (Pd) for the IRFR4105ZTRPBF is 48W at the case temperature.
The IRFR4105ZTRPBF is supplied in a TO-252AA (DPAK) package.
The IRFR4105ZTRPBF is designed for surface mounting.