IRFR4105TRPBF IRFR4105TRPBF is a 55V, 27A N-Channel HEXFET power MOSFET in a D-PAK (TO-252) surface-mount package. It has a maximum on-resistance of 45mΩ at 10V gate drive.
Mfr Part #:

IRFR4105TRPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRFR4105TRPBF is a 55V, 27A N-Channel HEXFET power MOSFET in a D-PAK (TO-252) surface-mount package. It has a maximum on-resistance of 45mΩ at 10V gate drive.
✓ Total Stock: 19,118 pcs

IRFR4105TRPBF Available from 2 distributors

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✓ Non-Authorised
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19,020 pcs
19020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
98 pcs
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IRFR4105TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFR4105TRPBF Description

Short technical summary and product information.

The IRFR4105TRPBF is an N-channel power MOSFET manufactured by Infineon Technologies. It is rated for a minimum drain-to-source breakdown voltage of 55V and a maximum continuous drain current of 27A at 25°C case temperature, or 19A at 100°C. The maximum on-resistance is 45mΩ at a gate-to-source voltage of 10V and a drain current of 16A. The device supports gate-to-source voltages up to ±20V and has a gate threshold voltage range of 2.0V to 4.0V.

 

Designed as a HEXFET power MOSFET, the IRFR4105TRPBF offers fast switching and is fully avalanche rated. Key dynamic characteristics include a total gate charge of 34nC, input capacitance of 700pF, and typical rise and fall times of 49ns and 40ns under specified test conditions. The transistor is rated for power dissipation of 68W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C.

 

The device is housed in a TO-252-3, D-Pak (SC-63) surface-mount package, making it suitable for automated assembly and compact PCB layouts. The IRFR4105TRPBF is lead-free as indicated in the datasheet and is intended for high-efficiency power switching applications.

IRFR4105TRPBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFR4105TRPBF N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IRFR4105TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFR4105TRPBF Features

  • N-channel MOSFET with 55V drain-source rating.
  • 27A continuous drain current at 25°C.
  • Low on-resistance of 45mΩ at 10V.
  • Fast switching HEXFET power MOSFET design.
  • Surface-mount D-Pak TO-252 package.

IRFR4105TRPBF Applications

  • Power switching in DC-DC converters.
  • Output stage for switching regulators.
  • Motor drive and load switching circuits.
  • High-efficiency power supply designs.

IRFR4105TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IRFR4105TRPBF?

The drain-to-source breakdown voltage is a minimum of 55V.

What continuous drain current can the IRFR4105TRPBF handle?

It is rated for 27A continuous drain current at 25°C case temperature, and 19A at 100°C.

What is the on-resistance of the IRFR4105TRPBF?

The maximum on-resistance is 45mΩ at ID=16A and VGS=10V.

What gate-to-source voltage range does the IRFR4105TRPBF support?

The gate-to-source voltage rating is ±20V.

What is the operating temperature range of the IRFR4105TRPBF?

It operates over a junction temperature range of -55°C to 175°C.

What package is the IRFR4105TRPBF available in?

It comes in a TO-252-3, D-Pak (2 leads + tab), SC-63 surface-mount package.

Is the IRFR4105TRPBF RoHS compliant?

The product data lists it as RoHS3 compliant, but this status is unverified.

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