| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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118 pcs
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118 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The IRFR4105PBF from Vishay Dale is an N-Channel HEXFET Power MOSFET designed for surface mount applications. It features a drain-source voltage (Vds) of 55V and a continuous drain current (Id) of 25A. The on-resistance (Rds(on)) is rated at 45 mOhm when tested at a gate-source voltage (Vgs) of 10V.
This MOSFET is housed in a D-PAK package, suitable for surface mounting. It has a maximum gate-source voltage of 4V and a typical threshold voltage of 4V. The device supports a pulse drain current (Idm) of up to 100A and has a power dissipation (Pd) of 46W. The thermal resistance from junction to case is 2.7°C/W.
Key electrical characteristics include a maximum drain current of 27A and a typical drain-source voltage of 55V. The component is marked with IRFR5104. Its dimensions are 10.5mm in depth, 2.55mm in height, and 6.8mm in width.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 55V.
The continuous drain current (Id) is 25A.
The on-resistance (Rds(on)) is 45 mOhm when tested at 10V Vgs.
The package type is D-PAK, suitable for SMD mounting.
The maximum gate-source voltage (Vgs Max) is 4V.