| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,020 pcs
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11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRFR4104TRPBF is a HEXFET power MOSFET from Infineon Technologies (formerly International Rectifier). It is an N-Channel enhancement mode MOSFET designed for high efficiency power conversion applications.
With a drain-source voltage rating of 40V and continuous drain current of 42A at Tc=25°C, this device offers a maximum on-resistance of 5.5mΩ at Vgs=10V. Typical on-resistance is 4.3mΩ. It features fast switching with typical turn-on delay of 17ns and rise time of 69ns, and turn-off delay of 37ns with fall time of 36ns.
The device is housed in a D-Pak (TO-252) surface mount package with gull wing leads. Junction operating temperature range is -55°C to 175°C, with a junction-to-case thermal resistance of 1.05°C/W and junction-to-ambient (PCB mount) of 40°C/W.
Typical applications include DC-DC converters, motor drives, and power management circuits where high efficiency and compact size are required. The device is lead-free and RoHS compliant as indicated by the PbF suffix.
40V.
The device is available in a D-Pak (TO-252) surface mount package.
-55°C to 175°C junction temperature.
5.5mΩ at 10V gate drive and 42A drain current.
42A at Tc=25°C.
Maximum 4V at 250µA drain current.