| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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195 pcs
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195 pcs | On Request | 1 | On Request | On Request | 1024 | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR4104PBF is a HEXFET® N-Channel power MOSFET from Infineon Technologies. It is designed for high efficiency and fast switching applications. The device features a drain-to-source breakdown voltage of 40V (minimum) and a continuous drain current of 42A at 25°C case temperature. The on-resistance is typically 4.3mOhm and maximum 5.5mOhm at Vgs=10V and Id=42A, enabling low conduction losses.
Key electrical characteristics include a gate threshold voltage range of 2.0V to 4.0V, total gate charge of 59nC typical, and input capacitance of 2950pF. The device supports fast switching with typical turn-on delay of 17ns and rise time of 69ns. It is rated for operating junction temperatures from -55°C to 175°C.
The IRFR4104PBF is housed in a D-Pak (TO-252-3) surface mount package. It is suitable for applications such as DC-DC converters, motor control, and power management systems where high efficiency and compact design are required. The device is lead-free and RoHS compliant (unverified).
The drain-to-source breakdown voltage is 40V minimum.
The IRFR4104PBF is available in a D-Pak (TO-252-3) surface mount package.
The operating junction temperature range is -55°C to 175°C.
The IRFR4104PBF is marked as RoHS3 compliant, but this is unverified. The datasheet confirms it is lead-free.
Typical 4.3mOhm, maximum 5.5mOhm at Vgs=10V and Id=42A.
42A at 25°C case temperature.
Total gate charge is 59nC typical, 89nC maximum at Vgs=10V.