Mfr Part #:

IRFR3910TRPBF

Mfr Name: Infineon

The Infineon IRFR3910TRPBF is an N-Channel MOSFET with a 100V drain-source voltage and 16A continuous drain current. It is designed for surface mounting in a TO-252AA (DPAK) package.

✓ Total Stock: 15,097 pcs

$ Price Range: $0.99

IRFR3910TRPBF Available from 4 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,020 pcs On Request	7020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	6,000 pcs On Request	6000 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,077 pcs On Request	1077 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFR3910TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	44 nC @ 10 V
Input Capacitance	640 pF @ 25
Mounting Type	Surface Mount
Power Dissipation	79W (Tc)
SVHC Present	Not Present
Tape & Reel	Yes

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IRFR3910TRPBF Description

Short technical summary and product information.

The Infineon IRFR3910TRPBF is a HEXFET® N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 16A at 25°C.

This MOSFET has a low on-resistance (Rds On) of 115mOhm at 10A and 10V gate-source voltage, with a gate charge (Qg) of 44 nC maximum at 10V. The gate-source voltage (Vgs) is rated at ±20V, and the input capacitance (Ciss) is 640 pF maximum at 25V.

Packaged in a TO-252AA (DPAK) surface mount package, the IRFR3910TRPBF is suitable for applications requiring efficient power switching. Its technology is MOSFET (Metal Oxide), and it operates with a drive voltage of 10V for optimal performance. The device also has a power dissipation of 79W (Tc).

This component is part of the HEXFET® series, known for their high performance and reliability in power management applications. The surface mount design facilitates integration into compact circuit boards.

IRFR3910TRPBF Quick Information

Product Type: MOSFET

Series: HEXFET®

Canonical Name: Infineon Technologies IRFR3910TRPBF N-Channel MOSFET

Subcategory: Single FETs, MOSFETs

IRFR3910TRPBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IRFR3910TRPBF Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFR3910TRPBF Features

N-Channel MOSFET technology.
100V drain-to-source voltage rating.
16A continuous drain current.
Low Rds On of 115mOhm.
Surface mount TO-252AA (DPAK) package.

IRFR3910TRPBF Applications

Suitable for DC-DC converter circuits
Used in power management applications
Ideal for motor control switching
Works in battery protection systems
Supports load switch designs

IRFR3910TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage for the IRFR3910TRPBF?

The drain-to-source voltage is 100 V.

What is the continuous drain current at 25°C?

The continuous drain current is 16A (Tc).

What is the Rds On at 10A and 10V?

The Rds On is 115mOhm.

What is the maximum gate charge?

The maximum gate charge is 44 nC @ 10 V.

What is the maximum gate-source voltage?

The maximum gate-source voltage is ±20V.

What is the input capacitance?

The input capacitance is 640 pF @ 25.

What is the package type for this MOSFET?

The package is TO-252AA (DPAK) and it is a surface mount device.