BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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23,970 pcs
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23970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRFR3806PbF is a HEXFET Power MOSFET featuring a 60V drain-to-source breakdown voltage and a continuous drain current of 43A at 25°C. It offers a low on-resistance of 12.6mΩ typical at 25°C, contributing to high efficiency in power switching applications.
This MOSFET is characterized by improved gate, avalanche, and dynamic dv/dt ruggedness, along with enhanced body diode dV/dt and dI/dt capability. Its applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and hard-switched or high-frequency circuits.
The device is available in D-Pak and I-Pak surface mount packages. It operates within a junction temperature range of -55°C to +175°C and has a maximum power dissipation of 71W at 25°C.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum V(BR)DSS is 60V at TJ = 25°C.
The IRFR3806PbF is offered in D-Pak and I-Pak packages.
The operating junction and storage temperature range is -55°C to +175°C.
The maximum continuous drain current is 43A at TC = 25°C with VGS = 10V, and 31A at TC = 100°C.
The maximum RDS(on) is 15.8mΩ at VGS = 10V, TJ = 25°C.
The typical gate threshold voltage is 2V, with a maximum of 4V at TJ = 25°C.
The maximum power dissipation is 71W at TC = 25°C.