| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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298 pcs
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298 pcs | On Request | 1 | On Request | On Request | 333 | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR3711Z is an N-Channel power MOSFET from Infineon Technologies designed for high efficiency power conversion. It features a maximum drain-to-source voltage of 20V and a continuous drain current of 93A at Tc=25°C, making it suitable for low voltage high current applications.
This MOSFET offers a low static drain-to-source on-resistance (Rds(on)) of 5.7 mΩ maximum at Vgs=10V and 7.8 mΩ at Vgs=4.5V, reducing conduction losses. The total gate charge (Qg) is typically 18nC and maximum 27nC at Vgs=4.5V, enabling fast switching. Capacitive characteristics include input capacitance of 2160 pF, output capacitance 700 pF, and reverse transfer capacitance 360 pF at Vds=10V.
Designed for high frequency synchronous buck converters and isolated DC-DC converters, this device also features fully characterized avalanche voltage and current for ruggedness. The operating junction temperature ranges from -55°C to 175°C, with a maximum power dissipation of 79W at Tc=25°C.
The IRFR3711Z is available in a surface mount D-Pak (TO-252-3) package, also known as DPak (2 Leads + Tab) or SC-63. The thermal resistance junction-to-case is 1.9 °C/W typical, and junction-to-ambient (PCB mount) is 50 °C/W.
The IRFR3711Z is available in surface mount TO-252-3 (D-Pak) package, also known as DPak (2 Leads + Tab) or SC-63.
The operating junction temperature range is -55°C to 175°C.
The part is marked as RoHS3 Compliant, but this has not been verified by official documentation.
The maximum drain-to-source voltage is 20V.
The Rds(on) is 4.5 mΩ typical (5.7 mΩ max) at Vgs=10V, Id=15A; and 6.2 mΩ typical (7.8 mΩ max) at Vgs=4.5V.
The total gate charge (Qg) is 18 nC typical and 27 nC maximum at Vgs=4.5V.
The maximum power dissipation is 79W at Tc=25°C.