| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate-to-Source Voltage | |
| Maximum power dissipation | |
| Pulsed Drain Current | |
| Tape and Reel |
The Infineon IRFR3710ZTRPBF is an N-channel HEXFET Power MOSFET utilizing advanced process technology for extremely low on-resistance per silicon area. This device features a 100V drain-to-source breakdown voltage and a maximum continuous drain current of 42A at 25°C (package limited).
With an ultra-low on-resistance of 18mΩ (typical) at 10V gate-to-source voltage and 33A drain current, the IRFR3710ZTRPBF is designed for high efficiency in power applications. It operates at temperatures up to 175°C junction operating temperature and offers fast switching speeds.
The MOSFET is housed in a D-Pak package, suitable for PCB mounting. It supports a wide operating temperature range from -55°C to +175°C. The device is lead-free and RoHS3 compliant.
Key electrical characteristics include a ±20V gate-to-source voltage rating and a maximum power dissipation of 140W at 25°C. Thermal resistance from junction-to-case is 1.05°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.63 | $2.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 100V.
The typical on-resistance is 15mΩ at 10V gate-to-source voltage and 33A drain current.
The maximum continuous drain current is 42A at 25°C (package limited).
The operating junction and storage temperature range is -55°C to +175°C.
The IRFR3710ZTRPBF is supplied in a D-Pak package.
The IRFR3710ZTRPBF is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.