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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The IRFR3709ZTRPBF is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, designed for high-efficiency power conversion applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 86A at Tc=25°C, with a pulsed drain current capability of 340A.
This MOSFET offers low on-resistance: 6.5mΩ maximum at Vgs=10V and 8.2mΩ maximum at Vgs=4.5V, enabling high current handling with minimal conduction losses. The gate threshold voltage ranges from 1.35V to 2.25V, making it suitable for both 4.5V and 10V gate drive logic. Total gate charge is 26nC maximum at Vgs=4.5V, supporting fast switching.
The device is housed in a surface-mount D-Pak (TO-252) package, which provides good thermal performance with a junction-to-case thermal resistance of 1.9°C/W. The operating junction temperature range is -55°C to 175°C. The part is lead-free and RoHS compliant.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current is 86A at Tc=25°C and 61A at Tc=100°C, with Vgs=10V.
The on-resistance is 6.5mΩ maximum at Vgs=10V, Id=15A, and 8.2mΩ maximum at Vgs=4.5V, Id=15A.
The operating junction temperature range is -55°C to 175°C.
It comes in a surface-mount D-Pak (TO-252) package.
Yes, the part is listed as RoHS3 compliant and is lead-free, though the RoHS status is unverified from official documents.