| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR3707ZTRPBF is a single N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is rated for a drain-to-source voltage of 30V and a continuous drain current of 56A at 25°C case temperature. The device offers a maximum on-resistance of 9.5mΩ at Vgs=10V and Id=15A, with a typical gate charge of 9.6nC at Vgs=4.5V.
This MOSFET is designed for high-frequency switching applications, including synchronous buck converters for computer processor power and isolated DC-DC converters with synchronous rectification. It supports drive voltages of 4.5V and 10V, with a gate threshold voltage range of 1.35V to 2.25V. The maximum power dissipation is 50W at 25°C case temperature.
The device is housed in a surface-mount D-Pak package (TO-252-3) and operates over a junction temperature range of -55°C to 175°C. It is RoHS3 compliant and REACH unaffected.
30V.
56A at Tc=25°C.
7.5mΩ typical, 9.5mΩ maximum at Vgs=10V and Id=15A.
-55°C to 175°C junction temperature.
Surface-mount D-Pak (TO-252-3).
Yes, it is RoHS3 compliant.
50W at Tc=25°C.