| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,020 pcs
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5020 pcs | On Request | 1 | On Request | On Request | 2115 | On Request | 2026-06-03 03:15:08 |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR3607TRPBF is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power switching applications including synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and high-speed hard-switched circuits.
Key electrical specifications include a drain-to-source voltage (Vdss) of 75V, a continuous drain current of 56A (wire bond limited) or 80A (silicon limited) at Tc=25°C, and a maximum pulsed drain current of 310A. The maximum on-resistance (Rds(on)) is 9mOhm at Vgs=10V and Id=46A, with a typical value of 7.34mOhm. The device features a maximum gate charge of 84nC at Vgs=10V and an input capacitance of 3070pF at Vds=50V.
The MOSFET is rated for a maximum power dissipation of 140W at Tc=25°C and an operating junction temperature range of -55°C to 175°C. It is offered in a surface-mount TO-252-3 (DPak) package, also known as SC-63, with the supplier device package designated as D-Pak.
The drain-to-source voltage (Vdss) is 75V.
The maximum continuous drain current is 56A at Tc=25°C (wire bond limited) and 80A at Tc=25°C (silicon limited).
The maximum on-resistance is 9mOhm at Vgs=10V and Id=46A, with a typical value of 7.34mOhm.
The operating junction temperature range is -55°C to 175°C.
It is available in a surface-mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of D-Pak.
The maximum gate charge (Qg) is 84nC at Vgs=10V.
The maximum input capacitance (Ciss) is 3070pF at Vds=50V.