| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,972 pcs
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11972 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The IRFR3504ZTRPBF is a HEXFET® Power MOSFET from Infineon Technologies, designed for high-efficiency power conversion applications. This N-Channel MOSFET offers a maximum drain-source voltage of 40V and a continuous drain current of 42A at 25°C case temperature (silicon limited to 77A). The device features an ultra-low typical on-resistance of 8.23 mOhm and a maximum of 9 mOhm at 10V gate drive, enabling minimal conduction losses.
With a maximum power dissipation of 90W at 25°C case temperature and an operating junction temperature range of -55°C to 175°C, this MOSFET is suitable for demanding environments. Fast switching characteristics are supported by low gate charge (30 nC typical) and low capacitances (1510 pF input capacitance). The device also offers repetitive avalanche capability up to the maximum junction temperature.
The IRFR3504ZTRPBF is housed in a surface-mount DPAK (TO-252) package with gull wing leads, making it suitable for automated assembly. The package is RoHS compliant and lead-free. Typical applications include DC-DC converters, motor drives, and power management circuits.
The maximum continuous drain current is 42A at Tc=25°C, with a silicon-limited rating of 77A at Tc=25°C, and 54A at Tc=100°C.
The maximum drain-source on-resistance is 9 mOhm at Vgs=10V and Id=42A, with a typical value of 8.23 mOhm.
The gate threshold voltage ranges from 2V to 4V at Id=250µA.
The maximum gate-source voltage is ±20V.
The input capacitance (Ciss) is 1510 pF typical at Vds=25V.
The output capacitance (Coss) is 340 pF typical at Vds=25V.
The total gate charge (Qg) is 30 nC typical and 45 nC maximum at Vgs=10V.