| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR3410TRPBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power conversion. It features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current of 31A at 25°C case temperature, with a maximum on-resistance of 39mΩ at 10V gate drive. The device offers fast switching performance with typical turn-on delay of 12ns and rise time of 27ns, supported by a low total gate charge of 56nC maximum. It is avalanche rated with a single pulse avalanche energy of 140mJ and avalanche current of 18A, ensuring ruggedness in demanding applications. The MOSFET is housed in a D-Pak (TO-252) surface mount package, featuring a junction-to-case thermal resistance of 1.4°C/W and a junction-to-ambient thermal resistance of 40°C/W (PCB mount). The operating junction temperature range is -55°C to +175°C. This part is lead-free (PbF) as indicated by the datasheet. Typical applications include high-frequency DC-DC converters, power management, and motor control circuits.
100V maximum.
TO-252-3 (D-Pak) surface mount package.
-55°C to +175°C.
RoHS3 Compliant (unverified).
31A maximum.
39 mΩ maximum at 18A.
4V maximum at 250µA drain current.