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IRFR320PBF N-Channel Power MOSFET with 400V drain-source voltage and 3.1A continuous drain current. Packaged in surface mount DPAK (TO-252).
Mfr Part #:

IRFR320PBF

Available from 3 distributors
Mfr Name: Vishay
Vishay
N-Channel Power MOSFET with 400V drain-source voltage and 3.1A continuous drain current. Packaged in surface mount DPAK (TO-252).
✓ Total Stock: 3,071 pcs

IRFR320PBF Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Hybrid Electronics ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request 907 On Request On Request
Tomark Electronics Ltd ✓
Non-Authorised Inventory information
69 pcs
On Request
69 pcs On Request 1 On Request On Request On Request On Request On Request
ADI/AAR OEM Supply ✓
Non-Authorised Inventory information
2 pcs
On Request
2 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRFR320PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRFR320PBF Description

Short technical summary and product information.

The IRFR320PBF is an N-Channel Power MOSFET manufactured by Vishay Siliconix. It features a maximum drain-source voltage of 400V and a continuous drain current of 3.1A at 25°C case temperature (2.0A at 100°C). The device is designed for fast switching applications with low gate charge (20 nC total) and low on-resistance (1.8 ohm maximum at Vgs=10V).

 

The MOSFET incorporates dynamic dV/dt rating and repetitive avalanche rating, enhancing ruggedness in demanding power conversion circuits. The DPAK (TO-252) surface mount package enables compact PCB designs and is suitable for vapor phase, infrared, or wave soldering.

 

Key specifications include a gate threshold voltage of 4V maximum, input capacitance of 350 pF at 25V, and an operating junction temperature range of -55°C to +150°C. The part is lead-free (PbF) per datasheet ordering information.

IRFR320PBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFR320PBF N-Channel Power MOSFET
Subcategory: Single MOSFET

IRFR320PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free (PbF)

IRFR320PBF Features

  • 400V maximum drain-source voltage rating.
  • 3.1A continuous drain current at 25°C case.
  • Surface mount DPAK (TO-252) package.
  • Maximum on-resistance of 1.8 ohm.
  • Fast switching with 20 nC total gate charge.

IRFR320PBF Applications

  • Used in switching power supply circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for motor control applications.
  • Employed in high-voltage power management.
  • Applicable in AC-DC inverters.

IRFR320PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of IRFR320PBF?

400V.

What is the package type of IRFR320PBF?

TO-252-3 (DPak) surface mount package.

What is the operating temperature range for IRFR320PBF?

-55°C to +150°C (junction).

Is IRFR320PBF RoHS compliant?

It is listed as RoHS3 compliant and lead-free (PbF) per datasheet ordering information. However, the compliance status is unverified; verification is recommended.

What is the gate threshold voltage of IRFR320PBF?

Maximum 4V at Id=250µA.

What is the maximum drain current of IRFR320PBF?

3.1A at case temperature 25°C, 2.0A at 100°C.

What is the on-resistance of IRFR320PBF?

Maximum 1.8 ohm at Vgs=10V, Id=1.9A.

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