| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
528 pcs
|
528 pcs | On Request | 1 | On Request | On Request | 95+ | On Request | On Request | |
|
63 pcs
|
63 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR320 is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for fast switching and rugged performance. It features a maximum drain-to-source voltage of 400V and a continuous drain current of 3.1A at 25°C case temperature, with a maximum on-resistance of 1.8Ω at 10V gate drive.
This device is rated for repetitive avalanche energy and includes a dynamic dV/dt rating, making it suitable for demanding power switching applications. The maximum gate charge is 20 nC, and the input capacitance is 350 pF, supporting efficient gate drive design.
The IRFR320 is offered in a surface-mount DPAK (TO-252) package, which is designed for vapor phase, infrared, or wave soldering. The operating junction temperature range is -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 400V.
The continuous drain current is 3.1A at Tc=25°C and 2.0A at Tc=100°C.
The maximum on-resistance is 1.8Ω at Id=1.9A and Vgs=10V.
The IRFR320 is available in a surface-mount DPAK (TO-252) package.
The operating junction temperature range is -55°C to 150°C.
The IRFR320 is listed as RoHS3 compliant, but this is unverified.