| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
972 pcs
|
972 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
180 pcs
|
180 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR310PBF is a third-generation power MOSFET from Vishay Siliconix, offered through Vishay Dale. It is an N-Channel device with a drain-source voltage rating of 400V and a continuous drain current of 1.7A at 25°C. The maximum on-resistance is 3.6 Ohms at a gate drive of 10V. The device is avalanche rated, with a single pulse avalanche energy of 86 mJ and repetitive avalanche energy of 2.5 mJ, providing ruggedness in switching applications. It features a total gate charge of 12 nC and input capacitance of 170 pF, enabling fast switching performance.
The MOSFET is housed in a DPAK (TO-252) surface mount package, compatible with vapor phase, infrared, or wave soldering processes. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 25W at case temperature 25°C. Typical applications include switch-mode power supplies, lighting ballasts, and motor control circuits.
400V.
DPAK (TO-252) surface mount package.
-55°C to 150°C (junction).
Yes, it is RoHS3 compliant (unverified).
3.6 Ohms maximum.
12 nC maximum at 10V.
Single pulse avalanche energy is 86 mJ minimum; repetitive avalanche energy is 2.5 mJ maximum.