| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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33,020 pcs
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33020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
738 pcs
|
738 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR2905ZTRPBF is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET series. It features a minimum drain-source breakdown voltage of 55V and a maximum continuous drain current of 42A at 25°C case temperature (30A at 100°C). The device offers low on-resistance of 14.5 mOhm maximum at 36A and 10V gate drive, with a typical value of 11.1 mOhm. Gate threshold voltage ranges from 2V minimum to 4V maximum at 250µA. The MOSFET has fast switching characteristics with typical turn-on delay of 14ns, rise time of 66ns, turn-off delay of 31ns, and fall time of 35ns. Input capacitance is 1380 pF typical at 25V drain-source. Total gate charge is 44 nC maximum at 10V. Power dissipation is 110W maximum at 25°C case temperature. The device operates over a junction temperature range of -55°C to 175°C. It is housed in a surface mount TO-252-3 (DPak) package with supplier device package D-Pak. The part is lead-free and listed as RoHS3 compliant.
The minimum drain-source breakdown voltage is 55V.
It is available in TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package is D-Pak.
The operating junction temperature range is -55°C to 175°C.
Yes, it is listed as RoHS3 compliant (unverified).
The maximum continuous drain current at Tc=25°C is 42A.
The gate threshold voltage is 2V minimum and 4V maximum at Id=250µA.
The maximum power dissipation at Tc=25°C is 110W.