| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRFR220NTR is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-to-source voltage (Vdss) of 200V and a continuous drain current of 5.0A at 25°C case temperature. The device has a maximum on-resistance of 600mΩ at a gate drive voltage of 10V.
This MOSFET is designed for high-frequency DC-DC converter applications, particularly telecom 48V input forward converters. It offers fully characterized capacitance and avalanche voltage and current ratings. The total gate charge is 23nC maximum, and the input capacitance is 300pF typical.
The device is housed in a surface-mount D-Pak (TO-252) package and operates over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 43W at 25°C case temperature.
The maximum drain-to-source voltage (Vdss) is 200V.
The continuous drain current is 5.0A at 25°C case temperature and 3.5A at 100°C case temperature.
The maximum on-resistance (Rds on) is 600mΩ at a drain current of 2.9A and gate voltage of 10V.
The device is available in a surface-mount TO-252-3 (DPak) package, also known as D-Pak.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant, but this status is unverified.
The maximum gate threshold voltage is 4.0V at a drain current of 250µA.