| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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232 pcs
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232 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The IRFR220NPBF is a HEXFET® single N-channel Power MOSFET from Infineon Technologies. It is engineered for applications requiring high frequency DC-to-DC conversion, offering benefits such as low gate-to-drain charge to minimize switching losses.
Key electrical characteristics include a drain-to-source breakdown voltage of 200V and a continuous drain current of 5.0A at 25°C. The maximum on-resistance (RDS(on)) is 600mΩ. The device features a gate-to-source voltage range of ±20V and a total gate charge of 15nC typical.
This MOSFET operates within a junction temperature range of -55°C to +175°C. It is packaged in a TO-252-3 surface-mount case, suitable for various soldering techniques. The device is characterized by its low static drain-to-source ON-resistance and dynamic dV/dt rating, simplifying design and enhancing performance in power supply applications.
Applications include typical SMPS topologies and Telecom 48V input forward converters. The MOSFET is fully characterized for capacitance, including effective COSS, and avalanche voltage and current, aiding in design simplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the IRFR220NPBF is 5.0A at 25°C.
The drain-to-source breakdown voltage (V(BR)DSS) for the IRFR220NPBF is 200V.
The operating junction temperature range for the IRFR220NPBF is -55°C to +175°C.
The IRFR220NPBF is supplied in a TO-252-3 package.
The typical input capacitance (Ciss) of the IRFR220NPBF is 300pF.