| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Vishay IRFR220NPBF is a HEXFET® single N-channel Power MOSFET. It is designed for high frequency DC-DC converters and offers benefits such as low gate-to-drain charge to reduce switching losses.
Key electrical specifications include a drain-to-source breakdown voltage of 200V and a continuous drain current of 5.0A at 25°C. The maximum on-resistance (RDS(on)) is 600mΩ. The device operates over a wide temperature range from -55°C to +175°C.
This MOSFET is packaged in a TO-252-3 (D-Pak) surface-mount package. It is characterized by its low gate-to-drain charge, fully characterized capacitance, and avalanche voltage and current ratings, simplifying design for applications like Telecom 48V input forward converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the IRFR220NPBF is 5.0A at 25°C.
The drain-to-source breakdown voltage of the IRFR220NPBF is 200V.
The operating junction and storage temperature range for the IRFR220NPBF is -55°C to +175°C.
The IRFR220NPBF is available in a TO-252-3 package.
The IRFR220NPBF is RoHS3 Compliant.