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IRFR220BTM_FP001 N-Channel MOSFET by On Semiconductor. Rated at 200V drain-source voltage, 4.6A continuous drain current, and 800mOhm maximum on-resistance.
Mfr Part #:

IRFR220BTM_FP001

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET by On Semiconductor. Rated at 200V drain-source voltage, 4.6A continuous drain current, and 800mOhm maximum on-resistance.
✓ Total Stock: 2,406 pcs

IRFR220BTM_FP001 Available from 1 distributor

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IRFR220BTM_FP001 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRFR220BTM_FP001 Description

Short technical summary and product information.

This part is an N-Channel enhancement mode power MOSFET produced using Fairchild's planar DMOS technology. It features a 200V maximum drain-source voltage and a continuous drain current of 4.6A at a case temperature of 25°C. The maximum on-resistance is 800mOhm at a gate-source voltage of 10V and a drain current of 2.3A. Typical gate charge is 12 nC and typical reverse transfer capacitance is 10 pF, supporting fast switching performance.

 

This device is suited for high efficiency switching applications such as DC/DC converters, switch mode power supplies, and DC-AC converters for uninterruptible power supplies. It has a maximum power dissipation of 40W at a case temperature of 25°C and 2.5W at an ambient temperature of 25°C.

 

The MOSFET is offered in a surface mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package designation of TO-252AA. The operating junction temperature range is -55°C to 150°C.

IRFR220BTM_FP001 Quick Information

Product Type: MOSFET
Canonical Name: IRFR220BTM_FP001 N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

IRFR220BTM_FP001 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFR220BTM_FP001 Features

  • 200V maximum drain-source voltage.
  • 4.6A continuous drain current at 25°C.
  • 800mOhm maximum on-resistance.
  • Surface mount DPak (TO-252) package.
  • Fast switching with low gate charge.

IRFR220BTM_FP001 Applications

  • Used in high efficiency switching DC/DC converters.
  • Suitable for switch mode power supplies.
  • Applied in DC-AC converters for UPS systems.

IRFR220BTM_FP001 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFR220BTM_FP001?

200V

What is the continuous drain current rating at Tc=25°C?

4.6A

What is the maximum on-resistance?

800mOhm at Vgs=10V and Id=2.3A

What is the operating temperature range?

-55°C to 150°C

What is the package type?

Surface mount TO-252-3 (DPak)

Is this part RoHS compliant?

RoHS3 compliant

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