| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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56,000 pcs
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56000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,045 pcs
|
1045 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR214TRPBF is a 250V, 2.2A N-Channel power MOSFET manufactured by Vishay Siliconix in a DPAK (TO-252) surface-mount package. It is designed for power switching applications that require fast switching and low on-resistance.
This MOSFET features a maximum drain-to-source voltage of 250V and a continuous drain current of 2.2A at 25°C case temperature. The maximum on-resistance is 2Ω at a gate-source voltage of 10V and drain current of 1.3A. Gate charge is 8.2nC maximum, which facilitates fast switching. The device is avalanche rated with a single-pulse avalanche energy of 190mJ and repetitive avalanche energy of 2.5mJ.
The IRFR214TRPBF operates over a junction temperature range of -55°C to +150°C and can dissipate up to 25W at 25°C case temperature. It is supplied in the DPAK (TO-252) package, suitable for surface-mount assembly using vapor phase, infrared, or wave soldering. The part is declared RoHS3 compliant.
The maximum drain-to-source voltage (Vdss) is 250 V.
It is available in the DPAK (TO-252-3) surface-mount package, also known as SC-63.
The junction operating temperature range is -55°C to +150°C.
The IRFR214TRPBF is listed as RoHS3 compliant.
The maximum continuous drain current is 2.2 A at 25°C case temperature and 1.4 A at 100°C.
The maximum on-resistance is 2 Ω at Vgs=10V and Id=1.3A.
The maximum gate charge is 8.2 nC at Vgs=10V, with gate-source charge of 1.8 nC and gate-drain charge of 4.5 nC.