| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,147 pcs
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3147 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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264 pcs
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264 pcs | On Request | 1 | On Request | On Request | 1329+ | On Request | On Request |
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The IRFR210TRPBF is an N-Channel power MOSFET from Vishay, part of the third generation power MOSFET family. It is designed for fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The device features a drain-source voltage rating of 200V and a continuous drain current of 2.6A at 25°C case temperature. The maximum drain-source on-resistance is 1.5Ω at VGS=10V and ID=1.6A.
This MOSFET offers a total gate charge of 8.2nC at VGS=10V, with gate-source charge of 1.8nC and gate-drain charge of 4.5nC. Input capacitance is 140pF at VDS=25V. The device is avalanche rated, with single pulse avalanche energy of 95mJ and repetitive avalanche energy of 2.5mJ. It also features a dynamic dV/dt rating of 5.0V/ns.
The IRFR210TRPBF is available in a surface-mount DPAK (TO-252) package, suitable for vapor phase, infrared, or wave soldering techniques. The device can dissipate up to 25W at case temperature 25°C, and 2.5W at ambient temperature 25°C. Operating junction temperature range is -55°C to 150°C.
This part is lead-free and halogen-free, and is available in tape and reel packaging. It is suitable for a variety of power switching applications where fast switching and ruggedness are required.
The maximum drain-source voltage is 200V.
The continuous drain current is 2.6A at TC=25°C.
The maximum drain-source on-resistance is 1.5Ω at VGS=10V and ID=1.6A.
The operating junction temperature range is -55°C to 150°C.
The package is TO-252-3, DPak (2 Leads + Tab), SC-63, with supplier device package D-Pak.
The part is marked as RoHS3 compliant, but this is unverified and should be confirmed with official documentation.