| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | 03 40 | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRFR210BTF is an N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications with a maximum drain-source voltage of 200V and continuous drain current of 2.7A. The device offers a maximum on-resistance of 1.5 Ohm at 10V gate drive.
The MOSFET utilizes MOSFET (Metal Oxide) technology and features a gate threshold voltage of 4V. It has a total gate charge of 9.3 nC and input capacitance of 225 pF, making it suitable for efficient switching at moderate frequencies.
The device is housed in a surface mount TO-252-3 (DPak) package, which provides good thermal performance with a maximum power dissipation of 26W at case temperature. It operates over a junction temperature range of -55°C to 150°C. The surface mount package allows for automated assembly in compact designs.
The drain-source voltage (Vds) is 200V.
It comes in a surface mount TO-252-3 (DPak) package.
-55°C to 150°C (junction temperature).
It is marked as RoHS3 Compliant, though this is unverified.
2.7A at case temperature (Tc).
Maximum 1.5 Ohm at Vgs=10V, Id=1.35A.
Maximum 4V at Id=250µA.