| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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76 pcs
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76 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR210 is a third-generation N-Channel power MOSFET from Vishay Siliconix designed for fast switching and rugged performance. It features a maximum drain-source voltage of 200V and a continuous drain current of 2.6A at 25°C case temperature. The device has a low on-resistance of 1.5 Ohm maximum at Vgs=10V and Id=1.6A, enabling efficient power management.
This MOSFET is rated for repetitive avalanche energy up to 2.5 mJ and single-pulse avalanche energy up to 95 mJ, making it suitable for applications requiring robust transient handling. The gate charge is 8.2 nC maximum at Vgs=10V, with gate-source charge of 1.8 nC and gate-drain charge of 4.5 nC typical. Input capacitance is 140 pF at Vds=25V.
The IRFR210 is housed in a DPAK (TO-252) surface-mount package, which allows for efficient heat dissipation. Power dissipation is rated at 25W maximum at case temperature 25°C and 2.5W at ambient temperature 25°C when mounted on a 1-inch square PCB. The device is suitable for surface-mount assembly using vapor phase, infrared, or wave soldering techniques.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current (Id) is 2.6A at Tc=25°C and 1.7A at Tc=100°C.
The maximum on-resistance (Rds on) is 1.5 Ohm at Vgs=10V and Id=1.6A.
The IRFR210 is available in a DPAK (TO-252) surface-mount package.
The operating junction temperature range is -55°C to +150°C.
The maximum total gate charge (Qg) is 8.2 nC at Vgs=10V.
RoHS status is listed as RoHS3 Compliant but is unverified — treat as low confidence.