Mfr Part #:

IRFR1N60ATRPBF

Mfr Name: Vishay

N-Channel MOSFET with 600V drain-source voltage, 1.4A continuous drain current, and 7Ω on-resistance in a DPAK surface-mount package.

✓ Total Stock: 11,401 pcs

IRFR1N60ATRPBF Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,020 pcs On Request	7020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	3,000 pcs On Request	3000 pcs	On Request	1	On Request	On Request	11+	On Request	On Request
Hybrid Electronics ✓ Non-Authorised Inventory information	1,381 pcs On Request	1381 pcs	On Request	1	On Request	On Request	1134	On Request	On Request

IRFR1N60ATRPBF Description

Short technical summary and product information.

The IRFR1N60ATRPBF is an N-Channel power MOSFET from Vishay Siliconix designed for high-voltage switching applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 1.4A at 25°C (0.89A at 100°C). The device has a low on-resistance of 7Ω maximum at 10V gate drive, with a low gate charge of 14 nC, contributing to efficient switching performance.

This MOSFET is characterized for avalanche ruggedness, with a single pulse avalanche energy rating of 93 mJ. It also offers a high peak diode recovery dV/dt of 3.8 V/ns. The input capacitance is 229 pF at 25V, and the device operates over a junction temperature range of -55°C to 150°C.

Packaged in a DPAK (TO-252) surface-mount package, the IRFR1N60ATRPBF is suitable for automated assembly. Typical applications include switch mode power supplies (SMPS), uninterruptible power supplies (UPS), and power factor correction (PFC) circuits. The device is RoHS compliant and has a moisture sensitivity level (MSL) of 1, unlimited.

IRFR1N60ATRPBF Quick Information

Product Type: Power MOSFET

Canonical Name: IRFR1N60ATRPBF N-Channel Power MOSFET

Subcategory: N-Channel Power MOSFET

IRFR1N60ATRPBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRFR1N60ATRPBF Features

600V drain-source voltage rating.
1.4A continuous drain current.
Low on-resistance of 7Ω at 10V.
Low gate charge of 14 nC.
Surface-mount DPAK package.

IRFR1N60ATRPBF Applications

Switch mode power supply (SMPS) circuits.
Uninterruptible power supply (UPS) designs.
Power factor correction (PFC) stages.

IRFR1N60ATRPBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of IRFR1N60ATRPBF?

The maximum drain-source voltage is 600V.

What package type is IRFR1N60ATRPBF available in?

It comes in a DPAK (TO-252) surface-mount package.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 150°C.

Is the IRFR1N60ATRPBF RoHS compliant?

The device is reported as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 1.4A at Tc=25°C.

What is the total gate charge of this MOSFET?

The maximum total gate charge is 14 nC at Vgs=10V.

What is the maximum on-resistance?

The maximum on-resistance is 7Ω at Id=840mA and Vgs=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	1.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	229 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs	7 Ω
SVHC Present	Not Present
Supplier Device Package	D-Pak
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	4 V