| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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525 pcs
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525 pcs | On Request | 1 | On Request | On Request | 1043+ | On Request | On Request |
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The IRFR1N60APBF is an N-Channel Power MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 1.4A at 25°C (0.89A at 100°C). The device offers a low maximum on-resistance of 7 Ohm at 10V gate drive and a low gate charge of 14 nC, simplifying drive requirements.
This MOSFET is characterized for avalanche ruggedness with a single pulse avalanche energy rating of 93 mJ and repetitive avalanche current of 1.4A. It also features improved gate, avalanche, and dynamic dV/dt ruggedness. Typical applications include switch mode power supplies (SMPS), uninterruptible power supplies (UPS), and power factor correction (PFC) circuits, particularly in low-power single transistor flyback topologies.
The device is housed in a DPAK (TO-252) surface mount package with a supplier device package of D-Pak. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 36W at 25°C case temperature.
600V.
DPAK (TO-252) surface mount package.
-55°C to 150°C (junction).
It is listed as RoHS3 Compliant, but this is unverified.
Maximum 14 nC at 10V.
Maximum 7 Ohm at 840mA, 10V.
93 mJ at 25°C.