| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,020 pcs
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9020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR15N20DTRPBF is an N-Channel power MOSFET from Infineon Technologies using HEXFET technology. It features a maximum drain-to-source voltage of 200V and continuous drain current of 17A at case temperature 25°C, with a typical on-resistance of 165mOhm at 10V gate drive. This device is designed for high-frequency DC-DC converters and switching applications requiring low gate charge (typical 41nC total) and fast switching speeds (9.7ns turn-on delay, 32ns rise time). It offers fully characterized capacitances including output capacitance over various VDS conditions (170pF typical at 25V, 1380pF at 1V, 67pF at 160V) to simplify design. The part is housed in a surface-mount D-PAK (TO-252AA) package with three leads and tab. Operating junction temperature range is -55°C to +175°C. The device is lead-free (PbF) with maximum power dissipation of 140W at case temperature 25°C. Avalanche energy is rated typically at 260mJ.
200 V.
17 A at Tc=25°C; 12 A at Tc=100°C.
165 mOhm maximum at VGS=10V, ID=10A.
-55°C to +175°C.
TO-252-3 (DPak) surface mount, also known as D-PAK (TO-252AA).
41 nC maximum total gate charge at VGS=10V, ID=10A, VDS=160V.
RoHS3 Compliant (unverified low confidence from attributes).