| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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75 pcs
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75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
This N-Channel MOSFET from Infineon Technologies, part number IRFR120ZTRL, offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 8.7A at 25°C. The device features a maximum on-resistance (Rds On) of 190mOhm at 5.2A and 10V gate drive voltage.
Designed with MOSFET (Metal Oxide) technology, this HEXFET® series component is suitable for various applications requiring efficient switching. It has a gate threshold voltage (Vgs(th)) of 4V at 250µA and a maximum gate-source voltage (Vgs) of ±20V. The input capacitance is also specified.
The IRFR120ZTRL is packaged in a Tape & Reel (TR) format and is designed for surface mounting in a TO-252AA (DPAK) case. Its N-Channel configuration and robust specifications make it a reliable choice for power management and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the IRFR120ZTRL is 100 V.
The continuous drain current (Id) at 25°C is 8.7 A.
The maximum on-resistance (Rds On) is 190 mOhm at 5.2A drain current and 10V gate-source voltage.
The maximum gate threshold voltage (Vgs(th)) is 4 V at 250µA.
The IRFR120ZTRL is in a TO-252AA (DPAK) surface mount package.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.