| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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938 pcs
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938 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The IRFR120TRL is an N-Channel power MOSFET from Vishay, part of the third-generation Power MOSFET family offering fast switching, ruggedized design, and low on-resistance. It features a maximum drain-source voltage of 100V and a continuous drain current of 7.7A at 25°C case temperature, with a pulsed current capability of up to 31A. The on-resistance is typically 270mOhm at 10V gate drive with 4.6A drain current.
This device is designed for surface-mount applications using the DPAK (TO-252) package with gull wing leads, suitable for automated assembly. It exhibits a total gate charge of 16nC at 10V and input capacitance of 360pF at 25V drain-source voltage, enabling efficient switching in high-frequency circuits. The MOSFET is rated for repetitive avalanche energy up to 4.2mJ and single pulse avalanche energy of 210mJ, providing robustness in inductive load switching.
Operating temperature range is -55°C to 150°C (junction), and maximum power dissipation is 42W at 25°C case temperature (2.5W at 25°C ambient on PCB). The device is suitable for DC-DC converters, power management, motor control, and other switching applications requiring high efficiency and reliability.
The maximum drain-source voltage (Vdss) is 100V.
It is available in a TO-252-3 (DPak) surface mount package with gull wing leads.
The junction temperature range is -55°C to 150°C.
The database indicates RoHS3 compliance, but this is unverified and low confidence.
The continuous drain current is 7.7A at Tc=25°C.
The maximum gate threshold voltage is 4V at Id=250µA.
The maximum on-resistance is 270mOhm at Id=4.6A and Vgs=10V.