| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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19,000 pcs
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19000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay IRFR120TR is a third-generation N-Channel power MOSFET designed for fast switching and ruggedized performance. It offers a maximum drain-to-source voltage of 100V and a continuous drain current of 7.7A at 25°C case temperature, with a maximum on-resistance of 270mΩ at a 10V gate drive.
This MOSFET is rated for repetitive avalanche energy up to 4.2mJ and single-pulse avalanche energy up to 210mJ, making it suitable for applications requiring robust operation under inductive loads. It also features a peak diode recovery dV/dt rating of 5.5 V/ns.
The device is supplied in a surface-mount DPAK (TO-252) package, designed for efficient thermal management with a maximum power dissipation of 42W at case temperature. It operates over a junction temperature range of -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current is 7.7A at Tc=25°C and 4.9A at Tc=100°C.
The maximum on-resistance is 270mΩ at Id=4.6A and Vgs=10V.
It is available in a surface-mount DPAK (TO-252) package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate charge is 16nC at Vgs=10V.
The RoHS status is listed as RoHS3 compliant but is unverified.