IRFR120NTRLPBF N-Channel MOSFET rated at 100V drain-source voltage and 9.4A continuous drain current, with 210mOhm maximum on-resistance at 10V gate drive.
Mfr Part #:

IRFR120NTRLPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET rated at 100V drain-source voltage and 9.4A continuous drain current, with 210mOhm maximum on-resistance at 10V gate drive.
✓ Total Stock: 2,655 pcs

IRFR120NTRLPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,360 pcs
2360 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
295 pcs
295 pcs On Request 1 On Request On Request 10+ On Request On Request

IRFR120NTRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFR120NTRLPBF Description

Short technical summary and product information.

The IRFR120NTRLPBF is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies (formerly International Rectifier). It utilizes MOSFET (Metal Oxide) technology and is designed for high-efficiency power switching applications.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 9.4 A at case temperature (Tc). The maximum on-resistance (Rds(on)) is 210 mOhm, tested at Id = 5.6 A and Vgs = 10 V. The device features a maximum gate charge (Qg) of 25 nC at Vgs = 10 V and an input capacitance (Ciss) of 330 pF at Vds = 25 V. The threshold voltage (Vgs(th)) is a maximum of 4 V at Id = 250 µA. Maximum power dissipation is 48 W at Tc.

 

The device is supplied in a TO-252-3 (DPak, SC-63) surface-mount package (supplier package PG-TO252-3) and supports an operating junction temperature range of -55°C to +175°C. It is offered in a tape and reel format (as indicated by the TR suffix) and is specified as Lead-Free and RoHS3 Compliant (unverified per source notes).

IRFR120NTRLPBF Quick Information

Product Type: MOSFET
Canonical Name: IRFR120N N-Channel MOSFET
Subcategory: Single MOSFET

IRFR120NTRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFR120NTRLPBF Features

  • N-Channel enhancement mode power MOSFET.
  • 100V maximum drain-to-source voltage.
  • 9.4A continuous drain current rating.
  • 210mOhm maximum on-resistance at 10Vgs.
  • Surface mount DPAK (TO-252-3) package.

IRFR120NTRLPBF Applications

  • Power supply and DC-DC converter circuits.
  • Motor control and switching applications.
  • Load switching and power management.

IRFR120NTRLPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the IRFR120NTRLPBF?

The maximum drain-to-source voltage (Vdss) is 100 V.

What is the maximum continuous drain current rating?

The maximum continuous drain current is 9.4 A at case temperature (Tc).

What is the on-resistance (Rds(on))?

The maximum on-resistance is 210 mOhm at Id = 5.6 A and Vgs = 10 V.

What package type is the IRFR120NTRLPBF available in?

It is supplied in the TO-252-3 (DPak, SC-63) surface mount package, specifically the PG-TO252-3.

What is the maximum operating junction temperature range?

The operating junction temperature range is -55°C to +175°C.

Is the IRFR120NTRLPBF RoHS compliant?

The part is marked as RoHS3 Compliant and Lead-Free, but this compliance information is unverified according to source notes.

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