| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR120NPBF is an N-Channel enhancement-mode power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power management applications requiring a drain-source voltage rating of 100V and a continuous drain current of 9.4A.
Electrical characteristics include a maximum on-resistance of 210 mOhm at 5.6A gate drive voltage of 10V, a maximum gate threshold voltage of 4V, and a low input capacitance of 330 pF at 25V drain-source. The device can dissipate up to 48W and operates over a junction temperature range of -55°C to 175°C.
The MOSFET is supplied in a surface-mount TO-252-3 (DPak) package with a supplier device package designation of D-Pak. It is specified as RoHS3 compliant and lead-free, though these compliance claims are currently unverified.
100V.
TO-252-3 (DPak) surface mount package.
-55°C to 175°C.
Yes, it is listed as RoHS3 compliant (unverified).
4V maximum at 250µA.
210 mOhm maximum at 5.6A, 10V.
330 pF maximum at 25V.