SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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774 pcs
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774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The IRFR120N is a Fifth Generation HEXFET Power MOSFET manufactured by International Rectifier. It features advanced processing for low on-resistance and fast switching speeds.
Key electrical specifications include a Drain-to-Source Breakdown Voltage (V(BR)DSS) of 100V and a Continuous Drain Current (ID) of 9.4A at 25°C case temperature. The Gate Threshold Voltage (VGS(th)) is typically 2V. The device has a maximum Power Dissipation (PD) of 48W at 25°C.
This MOSFET is designed for surface mounting in a TO-252AA (D-PAK) package. It is suitable for a wide variety of applications requiring efficient power switching. The device is fully avalanche rated.
Thermal characteristics include a Junction-to-Case thermal resistance (RθJC) of 3.1°C/W and a Junction-to-Ambient thermal resistance (RθJA) of 50°C/W for PCB mount.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 9.4A at 25°C case temperature.
The Drain-to-Source Breakdown Voltage is 100V.
The typical Gate Threshold Voltage is 2V.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFR120N is supplied in a TO-252AA package designed for surface mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.