| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
115 pcs
|
115 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade |
The IRFR120N is an N-channel HEXFET Power MOSFET designed for efficient power applications. It features a maximum drain-to-source breakdown voltage of 100V and a continuous drain current of 9.4A at 25°C case temperature. The on-resistance is specified at 0.21 Ohms when the gate-to-source voltage is 10V and the drain current is 5.6A.
This MOSFET utilizes advanced processing techniques for low on-resistance per silicon area and fast switching speeds. It is rated for a continuous power dissipation of 48W at 25°C case temperature and has a wide operating junction temperature range of -55 to +175°C.
The IRFR120N is housed in a TO-252AA package, designed for surface mounting. Its thermal resistance from junction-to-case is 3.1°C/W, and junction-to-ambient is 50°C/W for PCB mount applications.
Key electrical characteristics include a gate threshold voltage between 2.0V and 4.0V, and a total gate charge of 25nC. The part is also fully avalanche rated, with a single pulse avalanche energy of 91mJ.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the IRFR120N is 9.4A at 25°C case temperature.
The drain-to-source breakdown voltage of the IRFR120N is 100V.
The on-resistance (RDS(on)) of the IRFR120N is a maximum of 0.21 Ohms at VGS = 10V and ID = 5.6A.
The operating junction and storage temperature range for the IRFR120N is -55 to +175°C.
The IRFR120N is supplied in a TO-252AA package designed for surface mounting.