| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12,002 pcs
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12002 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The IRFR110TRPBF is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for fast switching and rugged performance. It offers a maximum drain-source voltage of 100V and a continuous drain current of 4.3A at 25°C. The device features a low on-resistance of 540mΩ at Vgs = 10V, minimizing conduction losses.
This MOSFET is avalanche rated with a single-pulse avalanche energy of 75mJ and repetitive avalanche current of 4.3A, making it suitable for applications requiring robust energy handling. It also provides a peak diode recovery dV/dt of 5.5V/ns for improved switching performance.
The IRFR110TRPBF is housed in a DPAK (TO-252) surface-mount package, ideal for automated assembly. It is supplied in tape and reel packaging for high-volume production. The device is lead-free and RoHS3 compliant, supporting environmentally conscious designs.
The maximum drain-source voltage (VDS) is 100V.
The continuous drain current is 4.3A at Tc = 25°C.
The maximum drain-source on-resistance is 540mΩ at Id = 2.6A and Vgs = 10V.
It comes in a DPAK (TO-252) surface-mount package.
Yes, it is RoHS3 compliant and lead-free.
The maximum gate charge (Qg) is 8.3nC at Vgs = 10V.
The operating junction temperature range is -55°C to 150°C.