IRFR110TRLPBF-BE3 N-channel Power MOSFET, 100V drain-source voltage, 4.3A continuous drain current, 540mΩ on-resistance. Surface-mount DPAK (TO-252) package.
Mfr Part #:

IRFR110TRLPBF-BE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-channel Power MOSFET, 100V drain-source voltage, 4.3A continuous drain current, 540mΩ on-resistance. Surface-mount DPAK (TO-252) package.
✓ Total Stock: 19,020 pcs

IRFR110TRLPBF-BE3 Available from 1 distributor

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✓ Non-Authorised
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19,020 pcs
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IRFR110TRLPBF-BE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFR110TRLPBF-BE3 Description

Short technical summary and product information.

The IRFR110TRLPBF-BE3 is a N-channel Power MOSFET from Vishay, part of the third generation Power MOSFET family. It features a drain-source voltage rating of 100V, continuous drain current of 4.3A at 25°C case temperature, and a maximum on-resistance of 540mΩ at 2.6A and 10V gate drive. The device is designed for fast switching and ruggedness, with dynamic dV/dt rating, repetitive avalanche capability (single pulse avalanche energy 75mJ, repetitive avalanche current 4.3A), and low gate charge (8.3nC total).

 

This MOSFET is supplied in a surface-mount DPAK (TO-252) package, suitable for automated assembly using vapor phase, infrared, or wave soldering. The part is lead (Pb)-free and halogen-free, with material categorization per Vishay definitions. It is available in tape and reel packaging for high-volume production.

 

Typical applications include power management in DC-DC converters, motor control circuits, load switching, and battery protection. The low on-resistance and fast switching characteristics make it suitable for high-efficiency designs. The device is rated for operation over a junction temperature range of -55°C to 150°C.

IRFR110TRLPBF-BE3 Quick Information

Product Type: Power MOSFET
Canonical Name: MOSFET N-CH 100V 4.3A DPAK
Subcategory: N-Channel Power MOSFET

IRFR110TRLPBF-BE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRFR110TRLPBF-BE3 Features

  • N-channel Power MOSFET with 100V drain-source voltage.
  • Continuous drain current up to 4.3A at 25°C.
  • Low on-resistance of 540mΩ at 10V gate drive.
  • Fast switching with 8.3nC total gate charge.
  • Surface-mount DPAK package for automated assembly.

IRFR110TRLPBF-BE3 Applications

  • Power management in DC-DC converters.
  • Motor control circuits.
  • Load switching applications.
  • Battery protection circuits.
  • Automotive electronics.

IRFR110TRLPBF-BE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFR110TRLPBF-BE3?

100V maximum.

What is the continuous drain current at 25°C?

4.3A at case temperature 25°C.

What is the on-resistance of the IRFR110TRLPBF-BE3?

540mΩ maximum at 2.6A drain current and 10V gate-source voltage.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the IRFR110TRLPBF-BE3 RoHS compliant?

Yes, RoHS3 compliant (low confidence, unverified).

What package does the IRFR110TRLPBF-BE3 come in?

TO-252-3 (DPak) surface mount package, also known as SC-63.

What is the total gate charge of this MOSFET?

8.3nC maximum at 10V gate-source voltage.

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