| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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124,690 pcs
|
124690 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
74 pcs
|
74 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR110PBF is an N-Channel Power MOSFET from Vishay Dale, designed for high-efficiency power management applications. It offers a drain-source voltage (Vdss) of 100V and a continuous drain current of 4.3A at 25°C case temperature. The device features a low on-resistance (Rds(on)) of 0.54Ω at Vgs=10V, enabling minimal conduction losses.
This MOSFET is rated for repetitive avalanche energy up to 2.5mJ and single pulse avalanche energy up to 75mJ, providing robust performance in inductive switching environments. It also supports a peak diode recovery dV/dt of 5.5 V/ns, making it suitable for high-speed switching circuits.
The IRFR110PBF is housed in a DPAK (TO-252) surface-mount package, which allows for efficient heat dissipation and compact PCB layouts. It is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The device is rated for operation over a junction temperature range of -55°C to +150°C.
The drain-source voltage (Vdss) is 100V.
The continuous drain current is 4.3A at Tc=25°C and 2.7A at Tc=100°C.
The maximum on-resistance (Rds(on)) is 0.54Ω at Vgs=10V and Id=2.6A.
The IRFR110PBF is available in a DPAK (TO-252) surface-mount package.
The operating junction temperature range is -55°C to +150°C.
The maximum total gate charge (Qg) is 8.3nC at Vgs=10V, with Qgs=2.3nC and Qgd=3.8nC.
The part is listed as RoHS3 compliant, but this status is unverified.