IRFR110PBF IRFR110PBF is a 100V, 4.3A N-Channel Power MOSFET in a DPAK (TO-252) surface-mount package. It features a low on-resistance of 0.54Ω and fast switching.
Mfr Part #:

IRFR110PBF

Available from 3 distributors
Mfr Name: Vishay
Vishay
IRFR110PBF is a 100V, 4.3A N-Channel Power MOSFET in a DPAK (TO-252) surface-mount package. It features a low on-resistance of 0.54Ω and fast switching.
✓ Total Stock: 130,764 pcs

IRFR110PBF Available from 3 distributors

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124,690 pcs
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IRFR110PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFR110PBF Description

Short technical summary and product information.

The IRFR110PBF is an N-Channel Power MOSFET from Vishay Dale, designed for high-efficiency power management applications. It offers a drain-source voltage (Vdss) of 100V and a continuous drain current of 4.3A at 25°C case temperature. The device features a low on-resistance (Rds(on)) of 0.54Ω at Vgs=10V, enabling minimal conduction losses.

 

This MOSFET is rated for repetitive avalanche energy up to 2.5mJ and single pulse avalanche energy up to 75mJ, providing robust performance in inductive switching environments. It also supports a peak diode recovery dV/dt of 5.5 V/ns, making it suitable for high-speed switching circuits.

 

The IRFR110PBF is housed in a DPAK (TO-252) surface-mount package, which allows for efficient heat dissipation and compact PCB layouts. It is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The device is rated for operation over a junction temperature range of -55°C to +150°C.

IRFR110PBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFR110PBF Power MOSFET, N-Channel, 100V, 4.3A, DPAK (TO-252)
Subcategory: N-Channel MOSFET

IRFR110PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFR110PBF Features

  • 100V drain-source voltage rating.
  • 4.3A continuous drain current at 25°C.
  • 0.54Ω on-resistance at Vgs=10V.
  • 8.3nC maximum gate charge.
  • Surface-mount DPAK (TO-252) package.

IRFR110PBF Applications

  • Used in power supply switching circuits.
  • Ideal for DC-DC converter designs.
  • Suitable for motor control applications.
  • Applied in high-speed switching systems.

IRFR110PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFR110PBF?

The drain-source voltage (Vdss) is 100V.

What is the continuous drain current of the IRFR110PBF?

The continuous drain current is 4.3A at Tc=25°C and 2.7A at Tc=100°C.

What is the on-resistance of the IRFR110PBF?

The maximum on-resistance (Rds(on)) is 0.54Ω at Vgs=10V and Id=2.6A.

What package does the IRFR110PBF come in?

The IRFR110PBF is available in a DPAK (TO-252) surface-mount package.

What is the operating temperature range of the IRFR110PBF?

The operating junction temperature range is -55°C to +150°C.

What is the gate charge of the IRFR110PBF?

The maximum total gate charge (Qg) is 8.3nC at Vgs=10V, with Qgs=2.3nC and Qgd=3.8nC.

Is the IRFR110PBF RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

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