| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR1010ZTRPBF is a HEXFET Power MOSFET from Infineon Technologies, designed for high-efficiency power conversion applications. It features an N-Channel enhancement mode with a drain-source voltage rating of 55V and a continuous drain current of 42A (package limited, 91A silicon limited at 25°C). The device offers ultra-low on-resistance, typically 5.8 mΩ and maximum 7.5 mΩ at Vgs=10V, ensuring minimal conduction losses.
This MOSFET incorporates advanced processing technology to achieve fast switching with typical turn-on delay of 17 ns and rise time of 76 ns. It is rated for a junction temperature range of -55°C to 175°C, with a power dissipation of 140W at case temperature 25°C. The device is capable of handling repetitive avalanche energy up to 42 mJ, making it suitable for rugged applications.
The IRFR1010ZTRPBF is offered in the D-Pak (TO-252-3) surface mount package, which is ideal for automated assembly. It is lead-free and RoHS compliant (unverified). Key applications include DC-DC converters, motor control, and power management in computing and industrial systems.
The drain-source voltage (Vdss) is 55V.
The continuous drain current is 42A (package limited) and 91A (silicon limited) at Tc=25°C.
The static drain-to-source on-resistance is typically 5.8 mΩ and maximum 7.5 mΩ at Vgs=10V, Id=42A.
The operating junction temperature range is -55°C to 175°C.
The device is available in a D-Pak (TO-252-3) surface mount package.
The device is listed as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.
The gate threshold voltage is 2.0V minimum and 4.0V maximum at Id=100µA.