| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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8,500 pcs
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8500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,020 pcs
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3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR024TRPBF is an N-Channel enhancement mode power MOSFET from Vishay, part of the third-generation Power MOSFET family. It features a drain-source voltage (Vdss) of 60V and a continuous drain current of 14A at 25°C case temperature, with a maximum on-resistance of 100 mOhm at Vgs = 10V. The device is designed for fast switching, low gate charge (25 nC max), and rugged operation, including a single pulse avalanche energy rating of 91 mJ. It is housed in a surface-mount DPAK (TO-252) package, suitable for automated assembly. The operating junction temperature range is -55°C to 150°C, and power dissipation is 42W at Tc = 25°C. This MOSFET is ideal for power management, DC-DC converters, and switching applications where efficiency and reliability are critical.
The drain-source voltage (Vdss) is 60V.
The continuous drain current (Id) is 14A at Tc = 25°C and 9A at Tc = 100°C.
The device is available in a DPAK (TO-252) surface-mount package with 2 leads and a tab.
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 Compliant, but this is unverified and low confidence.
The typical on-resistance is 0.10 Ohm at Vgs = 10V.
The maximum total gate charge (Qg) is 25 nC at Vgs = 10V.