| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR024PBF is an N-Channel power MOSFET from Vishay Siliconix, part of the third-generation Power MOSFET family. It is designed for fast switching applications and offers a drain-source voltage rating of 60V and a continuous drain current of 14A at 25°C case temperature. The device features a low on-resistance of 100mΩ (max) at Vgs=10V, with a gate charge of 25nC for efficient switching.
The MOSFET is housed in a surface-mount DPAK (TO-252) package, suitable for automated assembly. It supports a maximum power dissipation of 42W at Tc=25°C and operates over a junction temperature range of -55°C to 150°C. The device also includes a rated single-pulse avalanche energy of 91mJ, enhancing robustness in inductive switching applications.
Typical applications include power supply circuits, DC-DC converters, and motor control where high efficiency and fast switching are required. The lead-free (PbF) and halogen-free ordering options are available, as indicated in the datasheet.
The maximum drain-source voltage is 60V.
The continuous drain current is 14A at Tc=25°C.
The maximum on-resistance is 100 mOhm at Vgs=10V and Id=8.4A.
The package type is TO-220AB.