| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR024NPBF is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for switching and amplification applications requiring efficient power management. Key electrical specifications include a drain-to-source voltage (Vdss) of 55 V, a continuous drain current of 17 A at case temperature (Tc), and a maximum on-resistance of 75 mOhm at a gate-source voltage of 10 V and drain current of 10 A. The gate threshold voltage is 4 V maximum at 250 µA drain current, ensuring reliable turn-on. Input capacitance is 370 pF at 25 V Vds, and maximum gate charge is 20 nC at 10 V, indicating moderate switching speed. Maximum power dissipation is 45 W at case temperature. The device operates over a junction temperature range of -55°C to +175°C, making it suitable for harsh environments. The IRFR024NPBF is housed in a TO-252-3 DPAK surface mount package (also known as DPak with 2 leads and tab), which facilitates automated assembly and efficient heat transfer through the exposed metal tab. This component is appropriate for low-voltage switching, DC-DC conversion, and motor control applications where high efficiency and compact layout are priorities.
TO-252-3, DPak (2 Leads + Tab), SC-63. Supplier device package is D-Pak.
-55°C to 175°C junction temperature.
RoHS status is marked as RoHS3 Compliant but unverified.
55 V.
17 A at case temperature (Tc).
75 mOhm maximum at 10 A drain current and 10 V gate-source voltage.
20 nC maximum at 10 V gate-source voltage.