| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
63,000 pcs
|
63000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
4,994 pcs
|
4994 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR014TRLPBF is an N-Channel enhancement mode power MOSFET from Vishay Siliconix, part of the third-generation power MOSFET family. This device offers a maximum drain-source voltage (Vds) of 60V and continuous drain current (Id) of 7.7A at 25°C case temperature, with pulsed current capability up to 31A.
The MOSFET features a maximum on-resistance (Rds(on)) of 200 mΩ at Vgs=10V and Id=4.6A, ensuring efficient power conversion. With a total gate charge (Qg) of 11 nC at Vgs=10V, the device enables fast switching and reduced gate drive losses. Input capacitance is 300 pF at Vds=25V.
The IRFR014TRLPBF is supplied in a DPAK (TO-252) surface mount package, compatible with vapor phase, infrared, or wave soldering. Operating junction temperature range is -55°C to 150°C. The part is designated as lead (Pb)-free and RoHS compliant, though compliance status is unverified.
This device is suitable for a variety of power switching applications requiring high efficiency and ruggedness, including DC-DC converters, power supplies, and motor control circuits. The surface mount package enables compact PCB designs.
The maximum drain-source voltage is 60 V.
The continuous drain current is 7.7 A at Tc = 25°C.
The maximum on-resistance is 200 mΩ at Vgs = 10 V and Id = 4.6 A.
The operating junction temperature range is -55°C to 150°C.
It is available in a DPAK (TO-252-3) surface mount package.
The part is listed as RoHS3 compliant, but this status is unverified.
The maximum total gate charge is 11 nC at Vgs = 10 V.