| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR014PBF is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for fast switching, rugged device construction, and low on-resistance. It is rated for a maximum drain-to-source voltage of 60V and a continuous drain current of 7.7A at 25°C case temperature (4.9A at 100°C), with a pulsed drain current capability of 31A. The maximum on-resistance is 200mΩ at a gate drive of 10V and 4.6A drain current, and the gate charge is 11nC maximum at 10V, enabling efficient high-frequency switching.
This device features a single N-channel configuration with a maximum power dissipation of 25W at 25°C case temperature (2.5W at 25°C ambient when PCB-mounted), and an operating junction temperature range of -55°C to 150°C. It includes a dynamic dV/dt rating of 4.5V/ns and a single-pulse avalanche energy rating of 27.4mJ, providing ruggedness for demanding applications. The MOSFET is available in a TO-252-3 (DPAK) surface-mount package, suitable for vapor phase, infrared, or wave soldering.
The IRFR014PBF is part of the IRFR014 family and is available in tape and reel packaging options. It is designed for ease of paralleling and simple drive requirements, making it suitable for a variety of power switching applications. The device is lead (Pb)-free and halogen-free, with material categorization per Vishay's compliance definitions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.72 | $0.72 |
| 10+ | $0.66 | $0.66 |
| 100+ | $0.60 | $0.60 |
| 500+ | $0.54 | $0.54 |
| 1,000+ | $0.49 | $0.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
The continuous drain current is 7.7A at Tc=25°C, and 4.9A at Tc=100°C.
The maximum on-resistance (Rds on) is 200mΩ at Id=4.6A and Vgs=10V.
The operating junction temperature range is -55°C to 150°C.
The IRFR014PBF is available in a TO-252-3 (DPak, 2 Leads + Tab, SC-63) surface-mount package.
Maximum power dissipation is 25W at Tc=25°C and 2.5W at Ta=25°C when PCB-mounted.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.