| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,219 pcs
|
2219 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR014 is a third-generation N-Channel power MOSFET from Vishay Siliconix designed for fast switching, ruggedized performance, and low on-resistance. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 7.7A at 25°C. The on-resistance is typically 200mΩ at 10V gate drive, with a total gate charge of 11nC for efficient switching.
The device is housed in a DPAK (TO-252) surface mount package, supporting vapor phase, infrared, or wave soldering. It also offers a pulsed drain current capability of 31A and an avalanche energy rating of 27.4mJ. The operating junction temperature range is -55°C to 150°C.
Design considerations include a gate threshold voltage of 4V maximum and maximum gate-source voltage of ±20V. The input capacitance is 300pF at 25V drain-source. The package is also available in tape and reel for automated assembly.
The IRFR014 has a maximum drain-source voltage of 60V.
The IRFR014 is offered in a DPAK (TO-252) surface mount package.
The operating temperature range is -55°C to 150°C (junction).
The IRFR014 is RoHS3 compliant according to available data, but this has not been verified with a certificate.
The maximum on-resistance is 200mΩ at Vgs=10V and Id=4.6A.
The maximum total gate charge is 11nC at Vgs=10V.